2009 Ionizing radiation sensor
A device for accurately measuring and characterising the effects of ionising radiation on a microelectronic circuit.
Currently, numerous techniques have been developed aimed at mitigating the effect of SEEs (Single Event Effect), both in logic circuits and in memories, which have the object of increasing the average time between the faults presented by an electronic circuit when it operates in its typical operating environment. Previous works are also known aimed at detecting the specific instant when a SEU (Single Event Upset) occurs or to measure the rate of errors due to SEEs in circuits working in normal operating conditions. In said works, high capacity SRAM memories are used and the number of memory positions that have changed logic status as a consequence of a SEU is detected. However, these techniques do not allow determining the electric characteristics that have caused the SEU. The present device helps determining the electrical characteristics produced by a SEE in a determined node of the circuit, such as, transients of current induced in said node.
Scientists from the UIB have developed a device for the capturing and experimental measurement of the transient effects produced by a SEE in a microelectronic circuit which can be implemented in any standard CMOS technology.
The invention might be applied in verifying function critical devices related to space, aviation, automobile industry and communications.
- Ability to recognize media characteristics and adapt dynamically and automatically to them.
- Reduction of the computational burden.
- Avoids interferences that cause the increase of bit error rates.
- Maximum performance in the case of power operated devices.
- Energy saving in the case of battery operated devices.
- Compatibility with existing standards.
- Determine the electric characteristics that cause a SEU
- Capability to accurately characterize SEU and SET in microelectronic devices
- Measure currents provoked by these transients